Because of different etching velocities of inductively coupled plasma(ICP) etching induced by the chamber’s poor gas distribution and the high remnant stress with dry etching technology,selective wet etching technology of GaAs/AlAs was carried out.
针对感应耦合等离子(ICP)刻蚀气室气体分布不均匀性所导致的被刻蚀台面中间厚、边缘薄及干法刻蚀后残余应力大等缺点,进行了GaAs/AlAs的选择性湿法腐蚀工艺研究。
High-reflectivity InP/air gap distributed Bragg reflectors (DBRs) have been fabricated by the selective wet etching of InGaAs sacrificial layers with FeCl3:H2O solution.
通过V(FeCl3):V(H2O)溶液对InGaAs牺牲层的选择性湿法腐蚀,制备出具有InP/空气隙的高反射率分布布拉格反射镜(DBR),并将该选择性湿法腐蚀技术成功地应用到长波长InP基谐振腔增强型光探测器的制备中去,从而彻底解决了InP/InGaAsP高反射率分布布拉格反射镜难以外延生长的问题。
InP/air-gap distributed Bragg reflector (DBR) with high reflectivity is fabricated by using selective wet etching.
采用选择性湿法刻蚀 ,制备出基于 In P/空气隙的分布布拉格反射镜 ,并将该结构的反射镜引入 RCE光电探测器 。
